IGNOU MPH 5 SOLVED ASSIGNMENT

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MPH 5 2025 - English

Tutor Marked Assignment

ELECTRONICS

Course Code: MPH-005

Assignment Code: MPH-005/TMA/2025

Max. Marks: 100

Note: Attempt all questions. The marks for each question are indicated against it.

PART A

1.

a) Explain the construction and working of varactor diode. Write its two applications.

b) Differentiate between construction and operation of E and D mode of MOSFET.

c) With the help of circuit diagram explain the use of UJT as a diode pump stair case generator.

2. a) Draw the circuit diagram of CMOS inverter circuit and explain its working with the help of truth table.

b) What are the different pumping methods used in Laser diodes to achieve population inversion? Differentiate between LED and Laser diodes.

3. a) For a common emitter transistor configuration if β = 120, I_E = 5 mA, r_o=∞ and R₁=2kΩ, calculate Zi, AV and Ai.

b) In double ended input, double ended output configuration of a differential amplifier, the collector resistors R_C1 R_C2= 51kΩ, emitter resistor R_E = 47 ΚΩ and supply voltage is ± 10V. Calculate the dc collector voltage and collector current in the circuit. For the matched pair of n-p-n transistors with ẞ = 100, calculate the common mode gain of the circuit. What is the advantage of using a constant current source in the emitter circuit of the differential amplifier?

4 a) Draw the lead-lag network of Wien bridge oscillator and obtain the expression for its oscillation frequency

b) Explain the mechanical equivalences of L-C-R components of an oscillating crystal. A crystal has C = 0.05 pF, L = 1 H and R= 1 kΩ. Calculate its series and parallel resonant frequencies.

c) Explain the construction and operation of Impact Ionization Avalanche TransitTime (IMPATT) diode used for microwave generation.

PART B

5. a) Obtain the expressions for the individual gains of the 4 input channels shown in the following circuit, and thereby write down the expression for V_out.

b) Design and draw the circuit using op amps to solve the following simultaneous equations:

2x + 3y = 13

-x + y = 1

6. a) What is slew rate of an op-amp? What is its effect on the performance of the op- amp? What is the minimum value of slew rate for reproducing a triangular wave of 100 kHz with ± 10 V amplitude at the output?

b) Design and draw the circuit of an inverting Schmitt trigger using op-amp with hysteresis of 40% of ±V_SAT-

c) Design a first order active band pass filter using op-amps to pass the signal in the frequency range of 1 kHz to 10 kHz with voltage gain of 10.

7. a) Explain with the help of circuit diagram the working of linear voltage regulator using bipolar junction transistor as series pass element. State its advantages over shunt regulator using zener diode.

(b) Explain the principle of switch mode power supply with the help of schematic diagram. State its advantages over linear power supply.

8. a) Draw the circuit diagram of monostable multivibrator using an op-amp and explain its operation.

b) Explain with the help of circuit diagram working of 4-bit R-2R ladder network DAC using op-amp. 

c) Explain the organization of a typical microprocessor with the help of block diagram.

MPH 005 (January 2026 - July 2026) - ENGLISH

Tutor Marked Assignment

ELECTRONICS

Course Code: MPH-005

Assignment Code: MPH-005/TMA/2026

Max. Marks: 100

Note: Attempt all questions. The marks for each question are indicated against it.

PART A

1. a) Describe various electron-hole pair generation processes in semiconductor. 

b) Explain the complete switching ON and OFF cycle of a power diode with the help of appropriate diagram. What are forward and reverse recovery times of a power diode?

c) How can the efficiency of a solar cell be increased? How is the optimum bandgap chosen for the solar cell material? 

2. a) Describe the difference between the construction and operation of enhancement mode and depletion mode MOSFET. 

b) What are the causes of non-ideal characteristics of a p-n junction diode? 

3. a) Define intrinsic stand-off ratio of a UJT. Draw and explain the I-V characteristic of UJT. 

b) In single ended input – single ended output configuration of a differential amplifier, the input voltage is 10 mV. If the collector resistors , emitter resistor and supply voltage is , calculate the differential gain and output voltage of the circuit. Assume that the you are using Si transistors. 

4 a) Draw the lead-lag network of Wien bridge oscillator and obtain the expression for its oscillation frequency and required amplifier gain using time domain analysis.

b) Draw and explain the equivalent LCR resonant circuit of an oscillating crystal. A crystal has  and . Calculate its series resonant frequency. What is the effect of the crystal thickness on its frequency?

c) Describe the construction of Gunn diode. Explain with the help of E-k diagram the origin of negative resistance region in its I-V characteristics.

PART B

5. a) Design and draw the circuit using op amps to solve the following simultaneous equations:

b) Design and draw the circuit of a non-inverting Schmitt trigger using op-amp with hysteresis of 40% of . 

6. a) What are CMRR and slew rate of an op-amp? Explain with examples their effects on the performance of an op-amp. 

b) Explain the working of an op-amp based full wave precision rectifier with the help of appropriate circuit diagram. What are its advantages over a simple diode rectifier? 

c) Draw the circuit of antilogarithmic amplifier using an op-amp and obtain the expression for its output voltage. 

7. a) Explain the working of a shunt regulator using zener diode. What are the limitations of this circuit due to the non-idealities of the zener diode? 

b) Explain the terms lock range and capture range with reference to PLL. Why is the capture range smaller than the lock range? 

8. a) Describe the software techniques used for improving the signal-to-noise ratio of an electronic system. 

b) Output of a 4-bit DAC for digital input of 1001 is 4.5 V. Determine its step size and percentage resolution. What will be the output for digital input of 1110? 

c) Write an Assembly language program for microcontroller 8051 to compute the average of 6 bytes data stored from RAM location 45H and store the result at RAM location 30H. 

 

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